Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells
BluGlass Announces Entry into GaN Laser Diode Business
Gallium Nitride (GaN) Laser Diodes
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High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...
World's smallest mass-produced GaN laser chip from silicon working substrate
Reducing power losses in indium gallium nitride laser diodes on silicon
Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips | ACS Applied Electronic Materials
Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering
Laser slicing: A thin film lift-off method for GaN-on-GaN technology - ScienceDirect
Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems
Indium gallium nitride laser diode directly integrated with silicon
InGaN / GaN MQW Structure Epitaxial on Si for Violet LD
![PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/b56c6c3f707aa5ecd68e9ff9aabdf10e32045f61/3-Figure1-1.png "PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar")
PDF] Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System | Semantic Scholar
Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...
The structure of a standard InGaN / GaN laser diode with marked... | Download Scientific Diagram
Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics
Deep UV aluminium gallium nitride laser diode at 271.8nm wavelength
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si | ACS Photonics
KYOCERA Develops New GaN Laser Chip, World's Smallest* to be Mass-Produced from Silicon Working Substrate | News | Newsroom | KYOCERA
Researching | GaN-based ultraviolet microdisk laser diode grown on Si
Gallium-Nitride Diode Lasers | Ferdinand-Braun-Institut
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
ITRI and Ganvix Extend JV to Commercialize Innovative Laser Technology - EE Times Asia
Semiconductor Today features "Semi-polar indium gallium nitride laser diode/waveguide photodiode combo" | CEMSE | Computer, Electrical and Mathematical Sciences and Engineering
